2005-2009 }gεw ¨ΏΘw€Θ dq¨HwiH{€j@@mΫφ@@@@@@@@@@@@@@@@@@
2005-2009 PhD. Institute of Apllied Physics, University of Tsukuba.
2002-2005 ΨtΝεw χdqwΕΜ¨w@CmΫφ
2002-2005 Master. Microelectronics and solid state physics, East China Normal University
1998-2002 ΨtΝεw χdqwΕΜ¨w εw²Ζ
1998-2002 Bachelor. Microelectronics and solid state physics, East China Normal University
2009-»έ@Short pulse lasing through gain switching in semiconductor quantum structures (quantum wires, quantum wells, et al)
2005-2009 MBE growth and characterizations of Rare Earth doped GaN
2001-2005 Fabrication and Characterization of Nanocrystalline ZnO and Porous silicon
Suppression of concentration quenching of Er-related luminescence in Er-doped GaN
Shaoqiang Chen, Benjamin Dierre, Woong Lee, Takashi Sekiguchi, Shigeo Tomita, Hiroshi Kudo, and Katsuhiro Akimoto
Appl. Phys. Lett. 96, 181901 (2010)
Effect of V/III flux ratio on luminescence properties and defect formation of Er-doped GaN
Shaoqiang Chen, Akira Uedono, Shoji Ishibashi, Shigeo Tomita, Hiroshi Kudo, and Katsuhiro Akimoto
Appl. Phys. Lett. 96, 051907 (2010)
Relationship between Defects and Optical Properties of Er Doped GaN
Shaoqiang Chen, Akira Uedono, Jongwon Seo, Junji Sawahata and Katsuhiro Akimoto
Journal of Crystal Growth 311, P3097-3099 (2009)
Incorporation site and luminescence characterizations of Er doped GaN grown by molecular beam epitaxy
Shaoqiang Chen, Jongwon Seo, Junji Sawahata, Katsuhiro Akimoto.
Journal of Crystal Growth 311, P2042-2045 (2009)
Structural and Optical Properties of Er doped GaN with various Er concentrations
Shaoqiang Chen, Jongwon Seo, Junji Sawahata and Katsuhiro Akimoto.
Phys. Stat. Sol. (c) 5, No. 9, 3057-3059 (2008)
Structural characterization of Eu doped GaN by transmission electron microscopy
Jongwon Seo, Shaoqiang Chen, Junji Sawahata, Masaharu Mitome, and Katsuhiro Akimoto.
Journal of Ceramic Processing Research,Vol 9,No1,pp68~70(2008)
Vacancy-type defects in Er-doped GaN studied by a monoenerge tic positron beam
A. Uedono, C. Shaoqiang, S. Jongwon, K. Ito, H. Nakamori, N. Honda, S. Tomita, K.Akimoto, and H. Kudo
Journal of Applied physics 103.104505(2008).
Photoluminescence spectra of Eu-doped GaN
J. Sawahata, J. W. Seo, S. Chen, and K. Akimoto
Phys. Stat. Sol. (a) 205, No. 1, p71-74 4 (2008)
Photoluminescence spectra of Eu-doped GaN with various Eu concentrations
Junji Sawahata, Jongwon Seo, Shaoqiang Chen, Mikio Takiguchi, Daisuke Saito, Shinya Nemoto, and Katsuhiro Akimoto
Applied Physics Letters 89, 192104 (2006).
Nanocrystalline ZnO thin films on porous silicon substrate obtained by sol-gel technique
Chen shaoqiang, Zhang Jian, Feng Xiao,Wangxiaohua, Zhu Jianzhong, Zhu Ziqiang
Applied Surface Science, V241(2005)384-391
Hydroxyapatite coating on porous silicon substrate obtained by precipitation process
Chen Shaoqiang, Zhu Ziqiang, Zhu Jianzhong, Zhang Jian, Shi Yanling
Applied Surface Science, V230 (2004) 418-424
Bond enhance of Hydroxyapatite/silicon layers by introducing a porous silicon interlayer,
Chen Shaoqiang, Zhu Jianzhong, Zhu Ziqiang, Shi Yanling, Feng Xiao, Wang Xiaohua, Luo Laiqiang, Shao Li
SPIE Proceedings(TFPA2004) Vol. 5774 pp.559-562(2004)
Formation of porous silicon arrays using highly resistive silicon as masking material
Chen Shaoqiang, Zhu Ziqiang, ZhuJianzhong, Shao Li, Wang Weiming, Yu Ke
Journal of Functional Materials and Devices (in Chinese), Vol.10 No.1 March, 2004, p63-66
Formation of porous silicon arrays using Boron Ion Implantation
Chen Shaoqiang, Shao Li, Wang Weiming, ZhuJianzhong, Zhu Ziqiang
