[6]S. Koshiba et. al, "Fabrication and Control of GaAs/AlAs 10 nano-meter scale Structure by MBE"
Trans. MRS-J 24 [1], 93(1999)

Abstract:
We report the formation and control of a nano-meter scale facet structures for a quantum wire (QWR) as novel method for artificial nano structures. By using this a very sharp ridge facet structure, a ridge QWR has been successfully fabricated on a patterned (001) GaAs substrate. The structures studied by Electron microscopes and AFM have shown that a 10 nm scale QWR is formed at the corner of facet structure. The systematic studies enabled the control of QWR sizes by growth temperature. Their optical properties indicate that one-dimensional electron confined at the QWR. Laser emission by optical pumping from ridge QWR laser structures was observed at temperatures 4.7-290 K. The spatially and spectrally resolved microscopic images of the emissions cleared the origin of the stimulated emission.