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3 ƒ^ƒCƒgƒ‹ Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations
’˜ŽÒ T. Unuma, K. Kobayashi, A. Yamamoto, M. Yoshita, Y. Hashimoto, S. Katsumoto, Y. Iye, Y. Kanemitsu, and H. Akiyama
ŒfÚŽ–¼ Phys. Rev. B 70, 153305 (2004)@@PDF
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2 ƒ^ƒCƒgƒ‹ Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities
’˜ŽÒ T. Unuma, M. Yoshita, T. Noda, H. Sakaki, and H. Akiyama
ŒfÚŽ–¼ J. Appl. Phys. 93, 1586 (2003)@@PDF
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1 ƒ^ƒCƒgƒ‹ Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well
’˜ŽÒ T. Unuma, T. Takahashi, T. Noda, M. Yoshita, H. Sakaki, M. Baba, and H. Akiyama
ŒfÚŽ–¼ Appl. Phys. Lett. 78, 3448 (2001)@@PDF





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3 ƒ^ƒCƒgƒ‹ Comparison between intersubband infrared absorption and electronic Raman scattering in a narrow single quantum well (oral presentation)
’˜ŽÒ T. Unuma, K. Kobayashi, A. Yamamoto, M. Yoshita, Y. Hashimoto, S. Katsumoto, Y. Iye, Y. Kanemitsu, M. Baba, and H. Akiyama
Šw‰ï–¼ 7th International Conference on Intersubband Transition in Quantum Wells (ITQW 2003), Evolene, Switzerland, 1-5 September 2003
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2 ƒ^ƒCƒgƒ‹ Sensitivity of intersubband absorption linewidth and transport mobility to interface roughness scattering in GaAs quantum wells (oral presentation)
’˜ŽÒ T. Unuma, M. Yoshita, T. Noda, H. Sakaki, M. Baba, and H. Akiyama
Šw‰ï–¼ 29th International Symposium on Compound Semiconductors (ISCS 2002), Lausanne, Switzerland, 7-10 October 2002
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1 ƒ^ƒCƒgƒ‹ Ground state lasing in a high quality single quantum wire (oral presentation)
’˜ŽÒ Y. Hayamizu, L. N. Pfeiffer, M. Yoshita, S. Watanabe, A. Pinczuk, K. W. West, K. W. Baldwin, T. Unuma, and H. Akiyama
Šw‰ï–¼ 26th International Conference on the Physics of Semiconductors (ICPS 2002), Edinburgh, UK, 29 July - 2 August 2002





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1 ƒ^ƒCƒgƒ‹ Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, and alloy disorder
’˜ŽÒ T. Unuma, M. Yoshita, T. Noda, H. Sakaki, M. Baba, and H. Akiyama
‰ïê Swiss Federal Institute of Technology, Switzerland, 11 October 2002



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