3 | ƒ^ƒCƒgƒ‹ | Intersubband electronic Raman scattering in narrow GaAs single quantum wells dominated by single-particle excitations |
’˜ŽÒ | T. Unuma, K. Kobayashi, A. Yamamoto, M. Yoshita, Y. Hashimoto, S. Katsumoto, Y. Iye, Y. Kanemitsu, and H. Akiyama | |
Phys. Rev. B 70, 153305 (2004)@@PDF | ||
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2 | ƒ^ƒCƒgƒ‹ | Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, alloy disorder, and impurities |
’˜ŽÒ | T. Unuma, M. Yoshita, T. Noda, H. Sakaki, and H. Akiyama | |
J. Appl. Phys. 93, 1586 (2003)@@PDF | ||
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1 | ƒ^ƒCƒgƒ‹ | Effects of interface roughness and phonon scattering on intersubband absorption linewidth in a GaAs quantum well |
’˜ŽÒ | T. Unuma, T. Takahashi, T. Noda, M. Yoshita, H. Sakaki, M. Baba, and H. Akiyama | |
ŒfÚŽ–¼ | Appl. Phys. Lett. 78, 3448 (2001)@@PDF |
3 | Comparison between intersubband infrared absorption and electronic Raman scattering in a narrow single quantum well (oral presentation) | |
’˜ŽÒ | T. Unuma, K. Kobayashi, A. Yamamoto, M. Yoshita, Y. Hashimoto, S. Katsumoto, Y. Iye, Y. Kanemitsu, M. Baba, and H. Akiyama | |
Šw‰ï–¼ | 7th International Conference on Intersubband Transition in Quantum Wells (ITQW 2003), Evolene, Switzerland, 1-5 September 2003 | |
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2 | ƒ^ƒCƒgƒ‹ | Sensitivity of intersubband absorption linewidth and transport mobility to interface roughness scattering in GaAs quantum wells (oral presentation) |
’˜ŽÒ | T. Unuma, M. Yoshita, T. Noda, H. Sakaki, M. Baba, and H. Akiyama | |
Šw‰ï–¼ | 29th International Symposium on Compound Semiconductors (ISCS 2002), Lausanne, Switzerland, 7-10 October 2002 | |
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1 | ƒ^ƒCƒgƒ‹ | Ground state lasing in a high quality single quantum wire (oral presentation) |
’˜ŽÒ | Y. Hayamizu, L. N. Pfeiffer, M. Yoshita, S. Watanabe, A. Pinczuk, K. W. West, K. W. Baldwin, T. Unuma, and H. Akiyama | |
Šw‰ï–¼ | 26th International Conference on the Physics of Semiconductors (ICPS 2002), Edinburgh, UK, 29 July - 2 August 2002 |
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7 | ƒ^ƒCƒgƒ‹ | ÔŠO‹zŽû‚Æ“dŽqƒ‰ƒ}ƒ“ŽU—‚É‚æ‚é—ÊŽqˆäŒË‚̃Tƒuƒoƒ“ƒhŠÔ—ã‹N |
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6 | ƒ^ƒCƒgƒ‹ | GaAs—ÊŽqˆäŒË‚É‚¨‚¯‚éƒTƒuƒoƒ“ƒhŠÔ‘JˆÚ‚Ìü•‚Ì•¨—iƒVƒ“ƒ|ƒWƒEƒ€ˆË—Šu‰‰j |
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’˜ŽÒ | ‰LÀ‹B–çC–ì“c•ŽiC‹g“c³—TCå—T”VCHŽR‰p•¶ | |
Šw‰ï–¼ | “ú–{•¨—Šw‰ï 2002”NH‹G‘å‰ïC’†•”‘åŠwt“úˆäƒLƒƒƒ“ƒpƒX i2002”N9ŒŽ6-9“újC6pSA-3 | |
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4 | ƒ^ƒCƒgƒ‹ | TŒ^’Pˆê—ÊŽq×üƒŒ[ƒU[‚Ì”U“Á« |
’˜ŽÒ | ‘…—T•½C‹g“c³—TC“n•ÓaˆêC‰LÀ‹B–çCHŽR‰p•¶CL. N. PfeifferCA. PinczukCK. W. WestCK. W. Baldwin | |
Šw‰ï–¼ | “ú–{•¨—Šw‰ï ‘æ57‰ñ”NŽŸ‘å‰ïC—§–½ŠÙ‘åŠw‚т킱E‚‚³‚ƒLƒƒƒ“ƒpƒX i2002”N3ŒŽ24-27“újC24pWE-3 | |
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3 | ƒ^ƒCƒgƒ‹ | ”¼“±‘Ì—ÊŽqˆäŒË‚̃Tƒuƒoƒ“ƒh‹zŽû•‚É‚¨‚¯‚é•sƒ•¨EƒAƒƒCŽU—‚ÌŒø‰Ê‚ƃoƒ“ƒh”ñ•ú•¨ü«‚̉e‹¿ |
’˜ŽÒ | ‰LÀ‹B–çC–ì“c•ŽiC‹g“c³—TCå—T”VCHŽR‰p•¶ | |
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2 | ƒ^ƒCƒgƒ‹ | GaAs—ÊŽqˆäŒË‚É‚¨‚¯‚éƒTƒuƒoƒ“ƒh‹zŽû•‚̉·“xEˆäŒË•ˆË‘¶« |
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1 | ƒ^ƒCƒgƒ‹ | GaAs—ÊŽqˆäŒË‚̃Tƒuƒoƒ“ƒh‹zŽû•‚É‚¨‚¯‚é“ʉšŽU—‚ÌŒø‰Ê |
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Šw‰ï–¼ | “ú–{•¨—Šw‰ï ‘æ55‰ñ”NŽŸ‘å‰ïCVŠƒ‘åŠwŒÜ\—’ƒLƒƒƒ“ƒpƒX i2000”N9ŒŽ22-25“újC25pSB-7 |
1 | Intersubband absorption linewidth in GaAs quantum wells due to scattering by interface roughness, phonons, and alloy disorder | |
’˜ŽÒ | T. Unuma, M. Yoshita, T. Noda, H. Sakaki, M. Baba, and H. Akiyama | |
䕐 | Swiss Federal Institute of Technology, Switzerland, 11 October 2002 |