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\@writefile{lof}{\contentsline {figure}{\numberline {1}{\ignorespaces  (\textbf  {a}) Top and side views of the atomic arrangement model of a 1-ML-deep pit observed on the annealed (110) surface. This model has the Ga-terminated three-bond step-edge (A-B), the As-terminated three-bond step-edge (C-D), and the two-bond step-edges (A-D and B-C). (\textbf  {b}) Atomic step kinetics of the surface evolution during annealing. Proposed schematic drawings of the evolution for the island and pit structures from an assumed square initial shape. }}{1}{}}
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\@writefile{lof}{\contentsline {figure}{\numberline {2}{\ignorespaces  Contour map of migration barrier energy for (a) Ga adatom and (b) As adatom on a GaAs (110) surface with the surface atomic configuration. The dotted and solid circles correspond to As and Ga, respectively. }}{1}{}}
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