[2]S. Koshiba et. al, "Selective molecular beam epitaxy (MBE) growth of GaAs/AlAs ridge structures containing 10 nm scale wires and side quantum wells (QWs) and their stimulated emission characteristics"
J. Crystal Growth 201/202,810(1999)


Abstruct:
We report on the formation and optical characteristics of ridge waveguide structures containing quantum wires (QWRs). To form a waveguide, we adopted digital alloys, i.e. short-period superlattices (SLs), rapid changes of As fluxes using valved cells, growth temperatures ( Ts ), and introduction of growth interruptions. Stimulated emission from these ridge QWR laser structures was observed at temperatures 4.7-290 K by optical pumping.